A NOVEL EXPERIMENTAL-TECHNIQUE FOR THE LATERAL PROFILING OF OXIDE ANDINTERFACE STATE CHARGES IN HOT-HOLE DEGRADED N-MOSFETS

A new experimental technique, based on gate-to-drain capacitance C-gd( s) and charge pumping (CP) current, is proposed for the lateral profil ing of oxide and interface state charges in the LDD region of the n-MO SFET's. The device is injected with hot holes, which are subsequently removed by a low-level channel hot-electron stress, The degree of neut ralization is monitored by C-gd(s) until complete annihilation of trap ped holes is realized, This allows the effects of oxide and interface state charges on CP characteristics to be clearly distinguished, and t he spatial profiles of the two charges to be separately determined.