ORGANOINDIUM AZIDES - NEW PRECURSORS TO INDIUM NITRIDE

The synthesis, properties and the molecular structure in the solid sta te of triazido(tripyridino)indium (1), the mixed coordination polymer (CH2)(3)NMe2)](2)(mu-N-3)In[(CH2)(3)NMe2)](2)}(x), (2) and the polymer ic monoazide {(N-3)In[(CH2)(3)NMe2)](2)} (3) are reported. Some aspect s of the precursor chemistry of 1-3 related to the synthesis of InN th in films are discussed, with special emphasis on the aspect of the acc essible chemical purity of the precursors. Compound 3 al:owed the grow th of crystalline InN thin films at 300-450 degrees C in the absence o f ammonia using the technique of organometallic chemical vapor deposit ion. (C) 1997 Elsevier Science B.V.