Vanadium dioxide thin films have been synthesized by pulsed laser depo
sition from purl vanadium metal targets. The electrical characteristic
s of these films were measured as a function of externally applied str
ain, based on three-point bend geometry. It is observed that strain si
gnificantly affects the resistance of the VO2 thin films below their m
etallic-semiconducting transformation temperature (0.04% in-plane tens
ile strain causing similar to 35% reduction in resistance). Moreover,
the levels of strain required to cause such resistance changes are wel
l within those which can be produced by many strictive materials. (C)
1997 American Institute of Physics. [S0003-6951(97)03251-8].