BORON IMPLANTATION DOPING OF DIAMOND

Spin polarized B-12 nuclei were produced in B-11(d,p)B-12 nuclear reac tion and recoil implanted into a type Ib diamond sample at doses below 10(11) cm(-2). beta-radiation detected nuclear magnetic resonance spe ctra were measured directly after implantation at sample temperatures ranging from 300 to 800 K. The polarization asymmetry at the Larmor re sonance yielded fractions of boron ions at sites of full tetrahedral s ymmetry of 12(1)% at 300 K, increasing to 17(2)% at 800 K. It is argue d that these boron atoms are incorporated substitutionally by direct r eplacement collisions during the implantation process, The resonance s pectra also showed additional boron at low-symmetry sites. (C) 1997 Am erican Institute of Physics. [S0003-6951(97)01551-9].