This paper describes the preparation of new oxide host materials for E
r3+ based on GeO2 by the sol-gel method. The characterization of these
new materials is reported, with particular regard to the crystallizat
ion behavior: the tendency of GeO2 gels to crystallize during thermal
treatment, in fact, is a critical problem. The investigated systems, p
owders and films, are GeO2SiO2, with different compositions, and 80GeO
(2) . 20M(x)O(y), with M = Nb, Sn, Ti, Te.