LOW-TEMPERATURE ELECTROCHEMICAL SYNTHESIS OF ZRO2 FILMS ON ZIRCONIUM SUBSTRATES - DEPOSITION OF THICK AMORPHOUS FILMS AND IN-SITU CRYSTALLIZATION ON ZIRCONIUM ANODE
T. Tsukada et al., LOW-TEMPERATURE ELECTROCHEMICAL SYNTHESIS OF ZRO2 FILMS ON ZIRCONIUM SUBSTRATES - DEPOSITION OF THICK AMORPHOUS FILMS AND IN-SITU CRYSTALLIZATION ON ZIRCONIUM ANODE, Journal of the American Ceramic Society, 80(12), 1997, pp. 3187-3192
The feasibility of synthesizing crystalline ZrO2 films at low temperat
ures was evaluated using an electrochemical method. Anodization of zir
conium-metal substrates in tetraethyl ammonium hydroxide (TEAOH) solut
ions under constant applied voltage conditions at similar to 25 degree
s and similar to 100 degrees C was investigated. The chemistry and mic
rostructure of the anodic oxide films deposited on the zirconium-metal
substrates under the above conditions were characterized using X-ray
diffractometry and scanning electron microscopy. The results indicated
that, with sufficiently high applied voltages (in the range of 300 V)
at pH similar to 9.5, the initial dissolution of the zirconium anode
resulted in the local saturation of the electrolyte solution with Zr4, forming Zr(OH)(5)(-), which deposited electrophoretically on the ano
de as a thick, gelatinous film at 25 degrees C. Similar treatments at
100 degrees C resulted in an in situ crystallization of Zr(OH)(4) gel
to monoclinic ZrO2.