GROWTH AND CHARACTERIZATION OF CUINS2 FILMS GROWN BY RF ION-PLATING

Films of the chalcopyrite semiconductor CuInS2 were grown by rf ion-pl ating at a relatively low substrate temperature of 400 degrees C, whic h allows us to use a large size inexpensive glass substrate, for vario us levels of substrate bias, ranging from +50 V to -50 V. The Cu and I n compositions were controlled by varying the electron beam power of t he Cu2S and In2S3 sources. There were significant differences in the s urface morphology and crystallinity between films prepared under eithe r negatively biased or floating conditions and films prepared under ei ther positively biased or grounded conditions. Single phase CuInS2 fil ms of good quality were obtained when the substrate was subjected to t he floating conditions. Cu ions seem to play a very important role in the growth of CuxSy which acts as an accelerator for growing good crys talline CuInS2 at a relatively low temperature.