P-TYPE ALAS GROWTH ON A GAAS (311)B SUBSTRATE USING CARBON AUTO-DOPING FOR LOW-RESISTANCE GAAS ALAS DISTRIBUTED BRAGG REFLECTORS/

Authors
MIZUTANI A HATORI N OHNOKI N NISHIYAMA N OHTAKE N KOYAMA F IGA K
Citation
A. Mizutani et al., P-TYPE ALAS GROWTH ON A GAAS (311)B SUBSTRATE USING CARBON AUTO-DOPING FOR LOW-RESISTANCE GAAS ALAS DISTRIBUTED BRAGG REFLECTORS/, JPN J A P 1, 36(11), 1997, pp. 6728-6729
Citations number
9
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
36
Issue
11
Year of publication
1997
Pages
6728 - 6729
Database
ISI
SICI code
Abstract
A high p-type hole-concentration AlAs layer has been successfully grow n on a GaAs (311)B substrate by metalorganic chemical vapor deposition with using a Carbon auto-doping technique. The doping concentration w as well controlled by changing only V/III ratios. The hole concentrati on was as high as 2 x 10(19) cm(-3) at a V/III ratio of 6. A very low resistance of p-type distributed Bragg reflector was obtained with a a -doping technique to GaAs/AlAs interfaces.