IMPROVEMENTS OF THE PROPERTIES OF CHEMICAL-VAPOR-DEPOSITED (BA,SR)TIO3 FILMS THROUGH USE OF A SEED LAYER

(Ba,Sr)TiO3 (BST) thin films were deposited on seed-layer /Pt/SiO2/Si substrates by chemical vapor deposition and the properties of the film s were investigated. The effect of rapid thermal annealing (RTA) was a lso examined. The seed layer used in this experiment was the 10-nm-thi ck BST him fabricated by RF magnetron sputtering. Both the application of the seed layer and RTA increased the crystallinity of the BST film s, which resulted in improved dielectric properties of the films. The seed layer suppressed the formation of an oxygen-deficient layer at th e interface between BST and the bottom electrode, which resulted in a decrease of the current density of the Pt/BST/Pt capacitor. Furthermor e, the current density was further decreased by RTA. With increasing d eposition temperature, both the dielectric constant and the current de nsity of the BST films deposited on the seed layers increased.