PREPARATION AND ELECTRICAL-PROPERTIES OF SOL-GEL DERIVED LEAD-ZIRCONATE-TITANATE GLASS-CERAMIC THIN-FILMS ON METAL FOIL SUBSTRATES

Thin film capacitors were prepared by depositing 0.835PbZr(0.5)Ti(0.5) O(3) (PZT)-0.165(3PbO-SiO2 . B2O3) glass-ceramic thin films of 0.5 to 1 mu m thickness on aluminum, titanium and stainless steel foils (0.05 -0.2 mm thick) using a sol-gel process followed by firing at temperatu res around 600 degrees C. Materials suitable fot the composition of th in film capacitor included gold or nickel for the top electrode and Ti or Al foils for the substrate. The dielectric properties of the capac itors depended on the substrate materials. A relatively high capacitan ce (epsilon = 300) with a high dielectric loss (tan delta = 5%) capaci tor was obtained with the Ti foil, and a relatively low,capacitance (e psilon = 64) with a,low dielectric loss (tan delta = 0.9%) capacitor w as obtained with the Al foil. Excellent ultra-high frequency propertie s were shown in the case of Al foil capacitor.