LOW-TEMPERATURE PHOTOCONDUCTIVITY OF PB1-XSNXTE[IN] FILMS AT MILLIMETER WAVELENGTHS

Authors
ABRAHAMIAN YA KARAMIAN GG SERAGO VI STAFEYEV VI
Citation
Ya. Abrahamian et al., LOW-TEMPERATURE PHOTOCONDUCTIVITY OF PB1-XSNXTE[IN] FILMS AT MILLIMETER WAVELENGTHS, International journal of infrared and millimeter waves, 18(12), 1997, pp. 2315-2322
Citations number
13
Journal title
International journal of infrared and millimeter waves → ACNP
ISSN journal
01959271
Volume
18
Issue
12
Year of publication
1997
Pages
2315 - 2322
Database
ISI
SICI code
0195-9271(1997)18:12<2315:LPOPFA>2.0.ZU;2-M
Abstract
Photoconductivity of single crystal Pb1-xSnxTe<In>, (0.24 less than or equal to x less than or equal to 0.25), films at 4.2 K in the wavelen gth region 4 divided by 5 mm and magnetic fields up to 8 T was studied . Preparation technology of the films with high photoconductivity (P(H EP)less than or equal to 10(-12) WxHz(1/2)) and photoresponsiveness (t au less than or equal to 10(-6) s), as well as the measurements proced ure are described in the paper. Also the mechanism of photoconductivit y is discussed.