ELECTRONIC LEVEL DIAGRAM AND STRUCTURE OF METASTABLE CENTERS IN CDF2-GA AND CDF2-IN SEMICONDUCTING CRYSTALS

Citation
As. Shcheulin et al., ELECTRONIC LEVEL DIAGRAM AND STRUCTURE OF METASTABLE CENTERS IN CDF2-GA AND CDF2-IN SEMICONDUCTING CRYSTALS, Physics of the solid state, 39(12), 1997, pp. 1906-1911
Citations number
26
Journal title
ISSN journal
10637834
Volume
39
Issue
12
Year of publication
1997
Pages
1906 - 1911
Database
ISI
SICI code
1063-7834(1997)39:12<1906:ELDASO>2.0.ZU;2-H
Abstract
A study is reported of the optical properties of wide-gap, predominant ly ionic cadmium fluoride crystals in photo-and thermally stimulated t ransformations of metastable indium and gallium centers. An analysis o f these properties leads one to a conclusion of gallium having two met astable states (two types of deep centers), The jeep-center binding en ergies and the barriers separating the shallow (hydrogenic) and deep c enters have been determined for both impurities. Configuration-coordin ate diagrams are developed, and microscopic models for the deep center s are proposed. It is concluded that these centers are identical with the metastable DX centers in typical semiconducting crystals. Thus cad mium fluoride is the most ionic among the crystals where DX centers ha ve thus far been found. The potential of using such crystals for optic al information recording is discussed. (C) 1997 American Institute of Physics.