ORDERING OF THE STRUCTURE OF HYDROGENATED SILICON FILMS UNDER THE INFLUENCE OF LASER-RADIATION

A study is reported of the crystallization of amorphous hydrogenated s ilicon films under the influence continuous radiation from an argon la ser. The structure was investigated by Raman scattering of light. The radiation power density during the annealing process was 1.5-4.5 kW/cm (2) and the exposure was 1/125 sec. The Raman spectra were recorded fo r power densities below 0.1 kW/cm(2). The power density threshold for the appearance of crystallites was found to be 3.0 kW/cm(2). The phono n localization model was used to show that the size of the crystallite s produced for power densities of 3 kW/cm(2) was 40 Angstrom. (C) 1997 American Institute of Physics.