III-V INTERBAND 5.2 MU-M LASER OPERATING AT 185 K

We report the operation of a III-V interband laser at a wavelength bey ond 5 mu m and temperatures above 90 K. The active region consists of a strain compensated broken gap four layer superlattice of InAs/Ga0.6I n0.4Sb/InAs/Al0.3Ga0.42In0.28As0.5Sb0.5 grown by molecular beam epitax y. The maximum operating temperature under 2.01 mu m pulsed optical ex citation was 185 K at a wavelength of 5.2 mu m, The peak pump intensit y at the 80 K threshold was 62 kW/cm(2), and the characteristic temper ature (T-0) of the threshold intensity was 37 K. This T-0 is comparabl e to the best observed values for 3-4.5 mu m lasers based on the InAs/ GaInSb material system. (C) 1997 American Institute of Physics. [S0003 -6951(97)04252-6].