This letter describes the use of a sensitive photoresist for direct im
aging of optical intensity profiles in near-field photolithographic ex
periments. A comparison between experimental patterns in exposed, deve
loped photoresist and calculated profiles of intensity shows that this
procedure provides a reliable semiquantitative image of the irradianc
e distribution in the near field; experiment and theory correlate adeq
uately. A potential use of the superficial diffraction contrast record
ed in photoresist as the basis for a new method of the fabrication of
nanostructures is discussed. (C) 1997 American Institute of Physics. [
S0003-6951(97)02052-4].