ON THE ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF POROUS SILICON LAYERS SUBMITTED TO ELECTROOXIDATION

Citation
Jd. Moreno et al., ON THE ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF POROUS SILICON LAYERS SUBMITTED TO ELECTROOXIDATION, Journal of electroanalytical chemistry [1992], 437(1-2), 1997, pp. 135-139
Citations number
19
Journal title
Journal of electroanalytical chemistry [1992]
ISSN journal
15726657 → ACNP
Volume
437
Issue
1-2
Year of publication
1997
Pages
135 - 139
Database
ISI
SICI code
Abstract
Photoluminescent and electroluminescent properties of porous silicon l ayers were studied at different oxidation times after application of a nodic current transients. Changes in the wavelength and intensity of t he emitted photoluminescence could be explained as the consequence of a gradual electrooxidation of silicon structures. Also, the time delay associated with the recording of electroluminescence was interpreted as being due to the oxidation of bulk silicon by holes injected by the power supply. Once bulk silicon becomes oxidized, holes can reach the valence band of silicon microstructures where quantum size effects le ad to visible light emission. (C) 1997 Elsevier Science S.A.