GALVANOMAGNETIC PROPERTIES OF HG1-XMNXTE1-YSEY SEMIMAGNETIC SEMICONDUCTORS

The galvanomagnetic properties of single crystals of the semimagnetic semiconductors Hg1-xMnxTe1-ySey with 0.01<y <0.1 and x=0.05 and 0.14 i n the temperature range 4.2-300 K are investigated. The features of th e temperature dependence of the Hall coefficient R-H and the complicat ed behavior of R-H in a magnetic field are attributed quantitatively t o the existence of three groups of current carriers, viz., electrons a nd two types of holes, for which the temperature dependences of the de nsities and mobilities are obtained. A transition from p-type to n-typ e conductivity is observed as the Se content is increased, and the neg ative magnetoresistance simultaneously gives way to positive magnetore sistance. (C) 1997 American Institute of Physics.