INTRINSIC-PROPERTIES OF NISI

NiSi is a promising material for applications in Si microelectronics. A good understanding of its fundamental physical properties is, howeve r, necessary in order to obtain the best use possible. We present here resistivity, Hall effect and low-temperature specific heat of high qu ality single crystals. The resistivity of NiSi follows a classical met allic behaviour with a room temperature resistivity of similar to 10 m u Omega cm. The Hall coefficient at 300 K is approx -1.0 x 10(-10) mj C-I, changes sign at around 40 K and becomes positive: + 0.5 x 10(-10) m(3) C-1 at 4.2 K. Specific heat shows a classical metallic behaviour , i.e. it follows a gamma T + beta T-3 law with gamma = 1.73 mJ mol(-1 ) K-2 and beta = 0.0317 mJ mol(-1) K-4. It also exhibits an anomaly li kely of magnetic origin at the lowest temperatures. (C) 1997 Elsevier Science S.A.