G. Behr et al., IN2O3 - DIFFERENCES IN THE CHEMICAL AND PHYSICAL BEHAVIOR OF SINGLE-CRYSTALS, CERAMICS AND FINE POWDERS, Solid state ionics, 101, 1997, pp. 1183-1187
The chemical properties and electrical transport properties of SnOx do
ped In2O3 (ITO) and their differences between single crystals prepared
by chemical vapour transport, fine powders (150...200 nm particle siz
e) and weakly sintered ceramics (1100 degrees C, 24h, about 50% of the
oretical density) were reported. In single crystals the minimal resist
ivity is found at the solubility limit of SnOx (8.2 mol%), whereas in
ceramics and fine powders a minimum occurs at lower concentrations whi
ch is connected with a strong surface segregation of SnOx.