SILICON AND PHOSPHORUS COIMPLANTATION INTO UNDOPED AND INDIUM-DOPED GAAS SUBSTRATES

The electrical properties and low-temperature (4.2 K) photoluminescenc e of heavily doped n-type layers produced by silicon and silicon/phosp horus implantation into undoped and indium-doped Czochralski grown sem i-insulating GaAs substrates have been investigated. It is found that Si+P co-implantation results in suppression of deep levels in the anio n sublattice, an increase of donor activation efficiency, and a sharpe r carrier concentration profile in both types of substrates. The use o f indium-doped substrates enhances radiation defect annealing, but doe s not change the donor activation efficiency. (C) 1997 American Instit ute of Physics. [S1063-7826(97)00112-9].