EVOLUTION OF THE CURRENT-VOLTAGE CHARACTERISTICS OF PHOTOLUMINESCING POROUS SILICON DURING CHEMICAL ETCHING

Authors
GORBACH TY SVECHNIKOV SV SMERTENKO PS TULCHINSKII PG BONDARENKO AV VOLCHEK SA DOROFEEV AM MASINI G MAIELLO G LAMONICA S FERRARI A
Citation
Ty. Gorbach et al., EVOLUTION OF THE CURRENT-VOLTAGE CHARACTERISTICS OF PHOTOLUMINESCING POROUS SILICON DURING CHEMICAL ETCHING, Semiconductors, 31(12), 1997, pp. 1221-1224
Citations number
11
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
12
Year of publication
1997
Pages
1221 - 1224
Database
ISI
SICI code
1063-7826(1997)31:12<1221:EOTCCO>2.0.ZU;2-H
Abstract
It has been established that chemical etching of porous silicon in HF results in a large change in the current-voltage characteristics and p hotoluminescence parameters of the silicon. The results of the investi gation can be used to increase the efficiency of electroluminescence s tructures In-(porous Si)-Al by increasing the injection level of minor ity carriers and realizing a regime of double injection and high surfa ce recombination rate near the surface of porous silicon. (C) 1997 Ame rican Institute of Physics. [S1063-7826(97)00511-5].