PHOTOLUMINESCENCE OF LOCALIZED EXITONS IN COHERENTLY STRAINED ZNS-ZNSE GAAS(001) QUANTUM-WELLS/

The low-temperature photoluminescence (PL) of ZnS-ZnSe heterostructure s grown in the form of single quantum wells (QW) by the non-convention al technology of photo-assisted vapor phase epitaxy has been investiga ted. It is shown that the inhomogeneity of the quantum wells can be ex plained in terms of a model based on disordering of the heterointerfac es. It is found that the mobility edge which separates the localized s tates from the delocalized states is 6 meV below the heavy-exciton gro und state in the quantum wells with a nominal width L-z=11 Angstrom. ( C) 1997 American Institute of Physics. [S1063-7826(97)00812-0].