METASTABILITY AND RELAXATION PROCESSES IN HYDROGENATED AMORPHOUS-SILICON

Authors
BUDAGUAN BG AIVAZOV AA MEITIN MN SAZONOV AY BERDNIKOV AE POPOV AA
Citation
Bg. Budaguan et al., METASTABILITY AND RELAXATION PROCESSES IN HYDROGENATED AMORPHOUS-SILICON, Semiconductors, 31(12), 1997, pp. 1252-1256
Citations number
19
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
12
Year of publication
1997
Pages
1252 - 1256
Database
ISI
SICI code
1063-7826(1997)31:12<1252:MARPIH>2.0.ZU;2-J
Abstract
The kinetics of structural relaxation in hydrogenated amorphous silico n (a-Si:H) deposited by various methods is investigated by differentia l scanning calorimetry. The experimental results are used to analyze t he nature of the metastable states in a-Si:H and to investigate the re lationship between structural relaxation and light-induced metastabili ty (the Staebler-Wronski effect). (C) 1997 American Institute of Physi cs. [S1063-7826(97)02311-9].