CHARGED EXCITONS IN SELF-ASSEMBLED SEMICONDUCTOR QUANTUM DOTS

Citation
Rj. Warburton et al., CHARGED EXCITONS IN SELF-ASSEMBLED SEMICONDUCTOR QUANTUM DOTS, Physical review letters, 79(26), 1997, pp. 5282-5285
Citations number
22
Journal title
ISSN journal
00319007
Volume
79
Issue
26
Year of publication
1997
Pages
5282 - 5285
Database
ISI
SICI code
0031-9007(1997)79:26<5282:CEISSQ>2.0.ZU;2-H
Abstract
Interband excitations of an ensemble of InAs self-assembled quantum do ts have been directly observed in transmission experiments. The dots a re embedded in a field-effect structure allowing us to load the dots e lectrically. We establish an exact correspondence between Coulomb bloc kade in the device's vertical transport properties and Pauli blocking in the transmission spectra. We observe substantial shifts, up to 20 m eV, in the energies of the higher excitations on occupation of the ele ctron ground state. We argue that this is a consequence of an exciton- electron interaction.