CHANGES IN THE PHOTORESIST INHIBITOR DISTRIBUTION AFTER ION IRRADIATION AND THERMAL-TREATMENT

Authors
FINK D KLETT R BEHAR M SANCHEZ G KASCHNY JR HERTLEIN WG
Citation
D. Fink et al., CHANGES IN THE PHOTORESIST INHIBITOR DISTRIBUTION AFTER ION IRRADIATION AND THERMAL-TREATMENT, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 132(4), 1997, pp. 660-670
Citations number
12
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
132
Issue
4
Year of publication
1997
Pages
660 - 670
Database
ISI
SICI code
0168-583X(1997)132:4<660:CITPID>2.0.ZU;2-3
Abstract
Ion irradiation and thermal treatment leads to strong changes in the p hysical and chemical properties of photoresist materials. Among others modifications it is observed by Rutherford Backscattering that molecu les containing sulfur, that is inhibitor molecules and their fragments , tend to segregate close to the surface region. This behavior can be explained by assuming a model where the diffusion process of these mol ecules is followed by: (a) trapping at radiation-induced defects in th e near surface region and (b) chemical reaction with the implanted ion and/or indiffusing oxygen. (C) 1997 Elsevier Science B.V.