NONIONIZING ENERGY DEPOSITION OF PIONS IN GAAS AND SI FOR RADIATION-DAMAGE STUDIES

The dependence of the displacement damage induced by pions in GaAs has been evaluated, in the energy range 50 -1000 MeV, using the Lindhard theory and parametrised values of the pion-nucleus interaction. The cu rves corresponding to the NIEL produced by protons, neutrons, and pion s in Si and in GaAs intersect, in the limit of calculation errors, in the region 50 - 80 MeV, at a NIEL of 2 - 5.5 MeV cm(2)/g. The energy d ependence of the NIEL of pions in Si and GaAs is discussed in correlat ion with the simulated pion spectra at new hadron colliders.