HIGH FLUENCE PROTON IRRADIATION OF GAAS DETECTORS AT ROOM-TEMPERATUREAND AT -8-DEGREES-C

Semi-insulating GaAs detectors processed in Aachen using Freiberger Co mpound Material with low carbon content (FCM-LC) have been irradiated with protons (23 GeV) at eleven different fluences up to 6.3 x 10(14) p/cm(2) at room temperature. The detectors have been characterized in terms of macroscopic quantities like I-V characteristic curves and the signal response for incident minimum ionizing particles before and af ter irradiation. At the temperature of -8 degrees C three other GaAs d etectors have been irradiated with protons at fluences of about 6 x 10 (13) p/cm(2). After the irradiation they are warmed up at room tempera ture. The behaviour of the detectors before and after the warming up p eriod has been studied.