PERFORMANCE, HIGH-VOLTAGE OPERATION AND RADIATION HARDNESS OF FULL-SIZE ATLAS CHARGE DIVISION SILICON DETECTORS WITH LHC ELECTRONICS

Citation
Pp. Allport et al., PERFORMANCE, HIGH-VOLTAGE OPERATION AND RADIATION HARDNESS OF FULL-SIZE ATLAS CHARGE DIVISION SILICON DETECTORS WITH LHC ELECTRONICS, Nuclear physics. B, 1998, pp. 487-492
Citations number
3
Categorie Soggetti
Physics, Particles & Fields
Journal title
ISSN journal
05503213
Year of publication
1998
Supplement
61B
Pages
487 - 492
Database
ISI
SICI code
0550-3213(1998):<487:PHOARH>2.0.ZU;2-W
Abstract
ATLAS silicon detectors designed for charge division read-out were pro duced during 1995 and have been extensively studied both in the labora tory and test beam at the CERN SPS. Data have been taken with the anal ogue read-out FELIX-128 chip and studies simulating other read-out arc hitectures under consideration by ATLAS have been performed. To evalua te survival in the harsh environment of the LHC, detectors have been t ested to high voltage, both before and after radiation damage by proto ns exceeding the expected charged hadron dose after 10 years of LHC op eration. These tests have all employed analogue read-out to be sensiti ve to changes in noise and charge collection efficiency as a function of the detector damage.