SI-JFET DEVICES AND RELATED NOISE BEHAVIOR UNDER IRRADIATION

Monolithic N-channel junction field effect transistors (NJFETs) de cha racteristics, small signal parameters and noise have been studied from 300 K down to cryogenic temperatures before and after irradiation wit h Co-60 gamma-rays and fast neutrons (1 MeV). Radiation induced effect s on de parameters and noise are reviewed. Noise spectral density meas urements performed at various temperatures have shown that the radiati on induces a noise increase which is temperature and frequency depende nt.