AN EFFICIENT APPROACH TO NOISE-ANALYSIS THROUGH MULTIDIMENSIONAL PHYSICS-BASED MODELS

The paper presents a general approach to numerically simulate the nois e behavior of bipolar solid-state electron devices through a physics-b ased multidimensional device model. The proposed technique accounts fo r noise sources due to carrier velocity and population fluctuations, T he power and correlation spectra of the external current or voltage fl uctuations are evaluated through a Green's function, linear perturbati on theory equivalent to the classical Impedance Field Method for noise analysis and its generalizations. The numerical implementation of the method is performed through an efficient technique, which allows nois e analysis to be carried out with negligible overhead with respect to the small-signal simulation, Some case studies are analyzed in order t o compare the present approach with theoretical results from the class ical noise theory of pn junctions and bipolar transistors.