NANOSTRUCTURE FABRICATION BY REACTIVE-ION ETCHING OF LASER-FOCUSED CHROMIUM ON SILICON

Citation
Jj. Mcclelland et al., NANOSTRUCTURE FABRICATION BY REACTIVE-ION ETCHING OF LASER-FOCUSED CHROMIUM ON SILICON, Applied physics. B, Lasers and optics, 66(1), 1998, pp. 95-98
Citations number
12
Categorie Soggetti
Physics, Applied",Optics
ISSN journal
09462171
Volume
66
Issue
1
Year of publication
1998
Pages
95 - 98
Database
ISI
SICI code
0946-2171(1998)66:1<95:NFBREO>2.0.ZU;2-2
Abstract
We have fabricated chromium nanostructures on silicon by laser-focused atomic deposition and have further processed these structures by reac tive-ion etching in an SF6 plasma. We show that the result can be an a rray of parallel wires as narrow as 68 nm or an array of parallel Si t renches as narrow as 85 nm. The laser-focused deposition process is in herently parallel, so a large area is patterned simultaneously with an accurate periodicity of 212.78 nm. This method represents a novel way to make large, coherent arrays of sub-100 nm-size structures.