HIGH-BRIGHTNESS ALGAINP 573-NM LIGHT-EMITTING DIODE WITH A CHIRPED MULTIQUANTUM BARRIER

A novel chirped multiquantum barrier (CMQB) structure was used for AlG aInP light-emitting devices, We have theoretically studied the blockin g efficiency of the CMQB structure and found that the CMQB structure,i s more effective in blocking the electron wave than the conventional u niform multiquantum barrier (UMQB) structure, AlGaInP light emitting d iodes (LED's) with the CMQB structure and the UMQB structure were both fabricated and compared, It was found that the luminescence intensity of the AlGaInP CMQB LED is larger and the intensity distribution of t he AlGaInP CMQB LED is more uniform than the AlGaInP UMQB LED. The int ensity-current measurement also shows that the electroluminescence int ensity of the AlGaInP CMQB LED starts to saturate at a higher injectio n current.