ELECTRONIC TRANSPORT PHENOMENA IN DEVICES CONTAINING AMORPHOUS DIAMOND-LIKE FILMS ON SILICON

The electronic properties of amorphous diamond-like carbon (DLC) films grown by r-f plasma assisted CVD of methane at low temperature on n-t ype silicon substrates were examined for potential electronic applicat ions. Metal contacts (Al and Au) were deposited on the films and the c onstructed devices were characterised using temperature dependent curr ent voltage (I-V) measurements. Proper modelling and suitable techniqu es were applied on the experimental data, to analyze the measured quan tities. As a result, a Schottky type conductivity was observed and ana lyzed. The barrier height of the metal contacts was found to be 0.35 e V for Au and 0.75 eV for Al. (C) 1997 Published by Elsevier Science Lt d.