VOLTAGE-CURRENT CHARACTERISTICS OF A PN-DIODE FROM A DRIFT-DIFFUSION MODEL WITH NONLINEAR DIFFUSION

Authors
JUNGEL A SCHMEISER C
Citation
A. Jungel et C. Schmeiser, VOLTAGE-CURRENT CHARACTERISTICS OF A PN-DIODE FROM A DRIFT-DIFFUSION MODEL WITH NONLINEAR DIFFUSION, Quarterly of applied mathematics, 55(4), 1997, pp. 707-721
Citations number
5
Journal title
Quarterly of applied mathematics → ACNP
ISSN journal
0033569X
Volume
55
Issue
4
Year of publication
1997
Pages
707 - 721
Database
ISI
SICI code
0033-569X(1997)55:4<707:VCOAPF>2.0.ZU;2-I
Abstract
A drift-diffusion model with density-dependent diffusion coefficients for the flow of electrons and holes in a semiconductor crystal is cons idered. It contains a new class of models for recombination-generation effects as well as boundary conditions modelling Ohmic contacts. Exis tence of steady-state solutions is proven. For a planar pn-diode the q ualitative properties of steady-state solutions in dependence on the a pplied voltage is examined and, in particular, voltage-current charact eristics are discussed.