STUDIES OF INTERFACIAL ROUGHNESS OF GAAS ALAS SUPERLATTICES BY GRAZING-INCIDENCE X-RAY-SCATTERING/

A series of type-II GaAs/AlAs superlattices epitaxially grown with dif ferent interrupts have been investigated using the techniques of grazi ng incidence X-ray scattering and diffraction. The interrupts are spec ifically designed to alter the interfacial roughness in the superlatti ces for the present study. Various structural parameters including the layer thickness, interfacial roughness, and intra-layer correlation l engths of fluctuations in the quantum-well widths have been determined . These results are compared with measurements made on the same set of samples using photoluminescence and optical imaging techniques.