SELECTED 3D-TRANSITION METALS IN GALLIUM ANTIMONIDE - VANADIUM, TITANIUM AND IRON

3d-transition metals are known to produce deep levels in III-V semicon ductors like gallium arsenide or indium phosphide. In this work, galli um antimonide was doped with the most promising candidates vanadium, t itanium and iron according to the predictions of the energetic positio ns of the 3+/2+-charge transfer levels in the bandgap. For optimum inc orporation of dopants several growth methods (travelling heater method THM. Czochralski CZ and Liquid phase electroepitaxy LPEE) were used. The grown crystals were characterized by photoluminescence and electri cal measurements. No deep levels in the forbidden band were found in t he case of vanadium and titanium. Vanadium shows a scavenging effect o n unintentional impurities. Titanium tends to form inclusions. In gall ium antimonide doped with iron an acceptor was found with an activatio n energy of 26 meV. The findings support the predictions of Tersoff co ncerning charge transfer levels.