KINETICS OF INDIUM-PHOSPHIDE EPITAXIAL-GROWTH USING METAL-ORGANIC PRECURSORS

The deposition kinetics of InP using metal-organic precursors is prese nted. The proposed chemical mechanism involves both gas phase and surf ace reactions. The fundamental hypothesis adopted in deriving the mech anism was a dual site dissociative adsorption of the precursors on the growing surface. In any case, all the rate constants either were take n from the literature or estimated through thermochemical methods. In addition, the deposition reactor was simulated by means of a monodimen sional model that accounts for the main reactor features through the b oundary layer theory.