PROTON IRRADIATION EFFECTS IN SILICON JUNCTION DIODES AND CHARGE-COUPLED-DEVICES

Proton irradiation effects in silicon devices are studied, for compone nts fabricated in various substrates in order to reveal possible harde ning effects. The degradation of p-n junction diodes increases in firs t order proportionally with the fluence, when submitted to 10 MeV prot on irradiations in the range 5 x 10(9)-5 x 10(11) cm(-2). The damage c oefficients for both p-and n-type Czochralski, Float-Zone and epitaxia l wafers are reported. Charge-Coupled-Devices fabricated in a 1.2 mu m CCD-CMOS technology are shown to be quite resistant to 59 MeV H+ irra diations, irrespective of the substrate type. (C) 1997 Elsevier Scienc e Ltd. All rights reserved.