FORMATION OF OXIDE-TRAPPED CHARGES IN 6H-SIC MOS STRUCTURES

Gamma-ray irradiation effects on MOS structures formed on the silicon and the carbon faces of 6H-SiC are examined by using high frequency ca pacitance-voltage method. The accumulation of radiation-induced trappe d charges in the oxide near the interface depends on not only the gate bias polarity during irradiation but also the face type of 6H-SiC. Th e formation mechanisms of the trapped charges are discussed in conjunc tion with the face type and the bias polarity. (C) 1997 Elsevier Scien ce Ltd. All rights reserved.