MICROSTRUCTURAL CHANGES OF PHASE-CHANGE GESB2TE4 THIN-FILM IN SHORT-WAVELENGTH OPTICAL STORAGE

Authors
MEN LQ GAN FX
Citation
Lq. Men et Fx. Gan, MICROSTRUCTURAL CHANGES OF PHASE-CHANGE GESB2TE4 THIN-FILM IN SHORT-WAVELENGTH OPTICAL STORAGE, Optics communications, 145(1-6), 1998, pp. 21-26
Citations number
12
Categorie Soggetti
Optics
Journal title
Optics communications → ACNP
ISSN journal
00304018
Volume
145
Issue
1-6
Year of publication
1998
Pages
21 - 26
Database
ISI
SICI code
0030-4018(1998)145:1-6<21:MCOPGT>2.0.ZU;2-Z
Abstract
Short-wavelength optical recording characteristics of phase change GTe Sb(2)Te(4) thin film are reported. Microstructural changes that occur in a GeSb2Te4 thin film after recording have been observed and discuss ed with the temperature field analysis. (C) 1998 Elsevier Science B.V.