SEMICONDUCTOR-MATERIALS FOR IR OPTOELECTRONICS

Based on studies at the State Institute of Applied Optics Scientific M anufacturing Organization, this review discusses the main properties o f III-V, IV-VI, and II-VI narrow-band compounds and solid solutions, a s well as the properties of doped germanium and silicon. The use of th ese materials in IR sources and detectors is considered, along with th eir use as optical media for optoelectronic devices (filters, modulato rs, elements for integrated optics and gradient optics, etc.). (C) 199 6 The Optical Society of America.