UNCOOLED CDHGTE PHOTORESISTORS SENSITIVE IN THE 3-5-MU-M WAVELENGTH REGION

Authors
BARYSHEV NS RYZHKOV VN ANDREEV VA
Citation
Ns. Baryshev et al., UNCOOLED CDHGTE PHOTORESISTORS SENSITIVE IN THE 3-5-MU-M WAVELENGTH REGION, Journal of optical technology, 63(11), 1996, pp. 814-816
Citations number
7
Categorie Soggetti
Optics
Journal title
Journal of optical technology → ACNP
ISSN journal
10709762
Volume
63
Issue
11
Year of publication
1996
Pages
814 - 816
Database
ISI
SICI code
1070-9762(1996)63:11<814:UCPSIT>2.0.ZU;2-A
Abstract
This paper presents the results of theoretical and experimental studie s of uncooled CdHgTe photoresistors in the 3-5-mu m region. The detect ivity and voltage sensitivity of the fabricated photoresistors were D- lambda = (2-3) x 10(9) cm.Hz(1/2)/W and S-lambda=(5-6) X 10(2) V/W. ( C) 1996 The Optical Society of America.