NONEQUILIBRIUM CHARGE-CARRIER RECOMBINATION AT THE CONTACTS IN CDXHG1-XTE PHOTORESISTORS

This paper analyzes the continuity equation for minority charge carrie rs in CdxHg1-xTe. It shows that changing the interelectrode spacing an d the bias voltage affects the value of the charge carriers. It establ ishes that, on samples with a small interelectrode spacing, nonequilib rium carrier recombination at ohmic contacts deposited on the illumina ted surface can significantly exceed the surface recombination. (C) 19 96 The Optical Society of America.