ELECTRICAL CONDUCTANCE SIMULATION OF 2-DIMENSIONAL DIRECTIONAL SITE PERCOLATED NETWORKS FOR POROUS SILICON STRUCTURES

Two-dimensional porous silicon structures were modeled as two-dimensio nal directional site percolated networks (2D-DSPNs). In the present wo rk, the 2D-DSPNs were modeled as resistive networks, and the electrica l conductance values were numerically calculated. The effects of poros ity and geometrical connection on the electrical conduction behavior w ere isolated and identified, It was shown that the geometrical connect ion of 2D-DSPNs makes the conduction behavior distinctly different fro m that in traditional random networks. A geometry anisotropic random w alk model was developed to microscopically understand the macroscopic conduction behavior of 2D-DSPNs. (C) 1998 American Institute of Physic s.