EPITAXIAL ERBIUM SILICIDE FILMS ON (100)SILICON - GROWTH, STRUCTURE AND ELECTRICAL-PROPERTIES

Authors
TRAVLOS A SALAMOURAS N FLOUDA E
Citation
A. Travlos et al., EPITAXIAL ERBIUM SILICIDE FILMS ON (100)SILICON - GROWTH, STRUCTURE AND ELECTRICAL-PROPERTIES, Applied surface science, 120(3-4), 1997, pp. 355-364
Citations number
34
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
120
Issue
3-4
Year of publication
1997
Pages
355 - 364
Database
ISI
SICI code
0169-4332(1997)120:3-4<355:EESFO(>2.0.ZU;2-9
Abstract
Erbium silicide layers were grown epitaxially on (100) Si. Electron mi croscopy results showed that ErSi2-x layers grow on (100) Si with hexa gonal and tetragonal crystalline structures, depending on the method o f deposition, the substrate temperature and their stoichiometry. Elect rical resistivity measurements show that the two crystalline phases of ErSi2-x are metallic and have slightly different electronic and magne tic properties. (C) 1997 Elsevier Science B.V.