AB-INITIO CALCULATION OF THE ELECTRONIC-SPECTRUM OF A N-TYPE DELTA-DOPED GAAS GAXAL1-XAS HETEROJUNCTION/

For temperature zero we study the electronic spectrum of the two-dimen sional electron gas which exists in n-type delta-doped GaAs in proximi ty of a GaAs/GaxAl1-xAs heterojunction. Wave functions, electron subba nd energies; densities of states, Fermi lever and potential are self-c onsistently calculated as functions of the dopant concentrations and d istributions. Our calculations show how the limitations in 2D electron density in selectively doped heterostructures can be overcome with th e delta-doping technique. The density enhancement in the GaAs channel leads to a mobility improvement, making this system attractive for imp roved transistor applications.