ULTRAFAST LASER-INDUCED TRANSITIONS ON THE SURFACE OF SEMICONDUCTORS TO A COLD-LIQUID STATE OR A NEW CRYSTAL PHASE

Authors
EMELYANOV VI BABAK DV
Citation
Vi. Emelyanov et Dv. Babak, ULTRAFAST LASER-INDUCED TRANSITIONS ON THE SURFACE OF SEMICONDUCTORS TO A COLD-LIQUID STATE OR A NEW CRYSTAL PHASE, Laser physics, 7(2), 1997, pp. 514-523
Citations number
22
Categorie Soggetti
Optics,"Physics, Applied
Journal title
Laser physics → ACNP
ISSN journal
1054660X
Volume
7
Issue
2
Year of publication
1997
Pages
514 - 523
Database
ISI
SICI code
1054-660X(1997)7:2<514:ULTOTS>2.0.ZU;2-T
Abstract
Intermode anharmonic interaction is taken into account within the fram ework of the theory of ultrafast (t similar to 10(-13) s) structure ph ase transitions on the surface of semiconductors (Si, GaAs) under the action of femtosecond laser pulses. We specify conditions of plasma-in duced transitions either to the state of chaotically disordered atoms (cold liquid) or to a state with a crystal symmetry other than the ini tial symmetry of a crystal (new crystal phase). The relevant experimen ts with Si and GaAs are interpreted.