Amorphous alumina layers are deposited on a single crystal Si substrat
e by a e-gun evaporation technique. These films are then thermally ann
ealed in oxygen to be crystallized and, further, irradiated with an ex
cimer laser beam. At each stage of the film preparation, an x-ray phot
oelectron spectroscopy analysis is performed at the film surface and i
n depth, upon ion beam grinding. Results give evidence for the formati
on of an aluminosilicate upon thermal annealing of the film in oxygen.
At the surface itself, this compound is observed to decompose upon ex
cimer laser irradiation at energy densities exceeding 1.75 J/cm(2), gi
ving rise to free Si atoms and SiO2, however with complete disappearan
ce of Al atoms. Model photochemical reactions are proposed to explain
such transformations. (C) 1998 American Institute of Physics.