THE ROLE OF 2ND-NEIGHBOR EFFECTS IN PHOTOEMISSION - ARE SILICON SURFACES AND INTERFACES SPECIAL

Citation
Kz. Zhang et al., THE ROLE OF 2ND-NEIGHBOR EFFECTS IN PHOTOEMISSION - ARE SILICON SURFACES AND INTERFACES SPECIAL, Applied physics letters, 72(1), 1998, pp. 46-48
Citations number
25
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
72
Issue
1
Year of publication
1998
Pages
46 - 48
Database
ISI
SICI code
0003-6951(1998)72:1<46:TRO2EI>2.0.ZU;2-Q
Abstract
A widely used assignment scheme for Si 2p core-level photoemission stu dies of silicon oxidation relies solely on the formal oxidation state of the silicon. The tacit assumption of this assignment methodology is that second-neighbor effects have no measurable effect on observed Si 2p binding energies. In this letter, new experiments are combined wit h literature precedents to make the case that the second-neighbor effe cts play an important role in determining binding energy shifts. (C) 1 998 American Institute of Physics.