THE INFLUENCE OF THE DEFORMATION ON THE 2-DIMENSIONAL ELECTRON-GAS DENSITY IN GAN-ALGAN HETEROSTRUCTURES

Authors
GASKA R YANG JW BYKHOVSKI AD SHUR MS KAMINSKI VV SOLOVIOV SM
Citation
R. Gaska et al., THE INFLUENCE OF THE DEFORMATION ON THE 2-DIMENSIONAL ELECTRON-GAS DENSITY IN GAN-ALGAN HETEROSTRUCTURES, Applied physics letters, 72(1), 1998, pp. 64-66
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
1
Year of publication
1998
Pages
64 - 66
Database
ISI
SICI code
0003-6951(1998)72:1<64:TIOTDO>2.0.ZU;2-P
Abstract
We report on the effect of external strain on the two-dimensional elec tron gas density in AlGaN/GaN heterostructures grown on sapphire by lo w pressure metalorganic chemical vapor deposition. The electron sheet concentration in the studied samples was 4x10(12)-2x10(13) cm(-2) and decreased with compressive strain. Lower doped heterostructures had a higher sensitivity to applied strain. The comparison between the exper imental data and our model shows that the GaN layers are primarily nit rogen terminated at the heterointerface. (C) 1998 American Institute o f Physics.